TITLE

High performance silver ohmic contacts to YBa2Cu3O6+x superconductors

AUTHOR(S)
Tzeng, Y.; Holt, A.; Ely, R.
PUB. DATE
January 1988
SOURCE
Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p155
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Silver-YBa2Cu3O6+x superconductor ohmic contacts with specific contact resistance on the order of 10-8 Ω cm2 have been demonstrated. Alloying the contacts in O2 at 500 °C enhances the contact conductivity by two orders of magnitude.
ACCESSION #
9825593

 

Related Articles

  • Low rf-loss, bondable ohmic contacts on Tl2Ba2CaCu2O8-δ for microwave devices. Scharen, M. J.; Skoglund, D. L.; Forse, R. J.; Nilsson, B. J. L.; Hammond, R. B.; Olson, W. L. // Journal of Applied Physics;3/15/1993, Vol. 73 Issue 6, p3092 

    Presents a study which described different processes for the fabrication of bondable, low-loss ohmic contacts to high-temperature superconductor thin-film devices. Theoretical background; Formulation of the methods; Conclusions.

  • Ohmic and radiation losses in superconducting films. Drabeck, L.; Holczer, K.; Grüner, G.; Scalapino, D. J. // Journal of Applied Physics;7/15/1990, Vol. 68 Issue 2, p892 

    Presents a study which characterized the ohmic and radiation losses in superconducting films with film thickness comparable to the skin depth in the normal state and to the penetration depth in the superconducting state. Experimental arrangement; Oscillations of the surface resistance in the...

  • Quantifying the efficiency of electrodes for positive carrier injection into poly(9,9-dioctylfluorene) and representative copolymers. Campbell, Alasdair J.; Bradley, Donal D. C.; Antoniadis, Homer // Journal of Applied Physics;3/15/2001, Vol. 89 Issue 6, p3343 

    The perfect injecting contact for any semiconductor device is, by definition, an ohmic contact. When such a contact is made to an organic semiconductor the current density is limited by bulk space-charge effects. In the absence of charge carrier traps, J reaches the ultimate, trap-free,...

  • The Si/Pd ohmic contact to n-GaP based on the solid phase regrowth principle. Moon-Ho Park; Wang, L.C.; Dufner, D. C.; Deng, Fei; Lau, S. S.; Tan, I. H.; Kish, F. // Journal of Applied Physics;4/1/1997, Vol. 81 Issue 7, p3138 

    Examines the silicon/palladium ohmic contact to n-GaP based on the solid phase regrowth process principle. Rutherford backscattering spectrometry; Transmission electron microscopy; Energy dispersive x-ray spectrometry; Coox-Strack measurement; Contact resistivities; Ohmic contact formation...

  • Low resistance Pd/Zn/Pd ohmic contact to p-In0.82Ga0.18As0.39P0.61. Park, Moon-Ho; Wang, L.C. // Journal of Applied Physics;3/15/1997, Vol. 81 Issue 6, p2720 

    Studies a low resistance Pd/Zn/Pd ohmic contact to p-InGaAsP. Minimum resistivity of the contact; Surface and interfacial morphologies of the samples; Thermal stability of the contact.

  • Resistive switching characteristics and set-voltage dependence of low-resistance state in sputter-deposited SrZrO3:Cr memory films. Jae-Wan Park; Kyooho Jung; Min Kyu Yang; Jeon-Kook Lee; Dal-Young Kim; Jong-Wan Park // Journal of Applied Physics;6/15/2006, Vol. 99 Issue 12, p124102 

    60-nm-thick Cr-doped SrZrO3 thin films with polycrystalline structure were fabricated on SrRuO3/SrTiO3 (100) substrates at 450 °C by off-axis radio-frequency sputtering. From room temperature current-voltage measurements of Pt/Cr-doped SrZrO3/SrRuO3 structures, reproducible bistable resistive...

  • Plasma confinement by circularly polarized electromagnetic field in toroidal geometry. Svidzinski, ladimir A. // Physics of Plasmas;Oct2007, Vol. 14 Issue 10, p102512 

    A novel plasma confinement concept based on plasma confinement by electromagnetic pressure of circularly polarized electromagnetic fields is proposed. Practical implementation of this concept in a toroidal device is suggested. In this concept the confining field frequency is in the lower range...

  • Effects of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH[sub 3]CSNH[sub 2] solution. Song, June O; Park, Seong-Ju; Seong, Tae-Yeon // Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3129 

    We investigate the effect of CH[sub 3]CSNH[sub 2] solution treatment on Ti/Al ohmic contacts to n-GaN:Si (3×10[sup 18] cm[sup -3]). It is shown that the sulfide treatment results in a drastic increase in the photoluminescence intensity, compared with that of the untreated sample....

  • Ohmic contacts to n-GaAs using In/Pd metallization. Allen, L. H.; Hung, L. S.; Kavanagh, K. L.; Phillips, J. R.; Yu, A. J.; Mayer, J. W. // Applied Physics Letters;8/3/1987, Vol. 51 Issue 5, p326 

    Ohmic contacts to n-GaAs (Si doped at 2×1018 cm-3) with contact resistances of 0.7–1.5×10-6 Ω cm2 have been formed with deposited layers of In and Pd. The layers were sequentially evaporated and then annealed at 500 °C for 20 s to form In3Pd and a top layer of In. In...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics