TITLE

Gallium arsenide photoluminescence under picosecond-laser-driven shock compression

AUTHOR(S)
Lu, X. Z.; Garuthara, R.; Lee, S.; Alfano, R. R.
PUB. DATE
January 1988
SOURCE
Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p93
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A pump-and-probe technique was used to investigate shock effects on the photoluminescence spectra (∼833 nm) at T=80 K due to the direct transition E0 from the Γ6 conduction band to the Γ8 fourfold degenerate top valence band in GaAs. Under the shock loading condition, the photoluminescence peak was observed to blue shift and split into two components, corresponding to the transitions from the Γ6 conduction band to the valence heavy- and light-hole subbands, because of symmetry breaking by the uniaxial shock compression along the [001] direction. From the blue shift of the photoluminescence peaks, we deduced our picosecond-laser-driven shock pressure of ∼10 kbar.
ACCESSION #
9825568

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics