Liquid phase epitaxy of Pb1-xEuxTe thin films

Hacham, A.; El-Hanany, U.; Rotter, S.; Shapira, Yoram
January 1988
Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p108
Academic Journal
Epitaxial layers of Pb1-xEuxTe with x<0.06 have been grown for the first time using liquid phase epitaxy. The epitaxy was done from Te-rich solutions since the commonly used Pb solutions, which exothermally form Pb-Eu intermetallics, cannot be used to grow this compound. The basic growth parameters and conditions were investigated. The results show that the incorporation of Eu into PbTe lattice is an endothermal process, with an activation energy of 1.0 eV. The reported technique yields device quality layers showing flat surfaces and sharp interfaces.


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