TITLE

Luminescence of heteroepitaxial zinc oxide

AUTHOR(S)
Bethke, S.; Pan, H.; Wessels, B. W.
PUB. DATE
January 1988
SOURCE
Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p138
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin layers of ZnO were grown on (0001) oriented sapphire by organometallic chemical vapor deposition. Low-temperature photoluminescence indicates that near-band-edge luminescence dominates the spectrum. In contrast to bulk grown material deep level luminescence for the layers is relatively weak.
ACCESSION #
9825560

 

Related Articles

  • Highly textured and conductive undoped ZnO film using hydrogen post-treatment. Seung Jae Baik; Jae Hoon Jang // Applied Physics Letters;6/30/1997, Vol. 70 Issue 26, p3516 

    Proposes a the method to enhance the characteristics of undoped zinc oxide (ZnO) films by hydrogen post-treatment using photochemical vapor deposition. Observation of a decrease in the resistivity of hydrogen treated film; Absence of degradation of total transmittance; Explanation for the...

  • Ultraviolet-emitting ZnO nanowires synthesized by a physical vapor deposition approach. Kong, Y. C.; Yu, D. P.; Zhang, B.; Fang, W.; Feng, S. Q. // Applied Physics Letters;1/22/2001, Vol. 78 Issue 4, p407 

    ZnO nanowires were mass produced using a physical vapor deposition approach. The ZnO nanowire monocrystallites have an average diameter around 60 nm and length up to a few micrometers. The unidirectional growth of the ZnO nanowires was controlled by the conventional vapor-liquid-solid mechanism....

  • Effects of intentionally introduced hydrogen on the electrical properties of ZnO layers grown by metalorganic chemical vapor deposition. Theys, Bertrand; Sallet, Vincent; Jomard, Franc¸ois; Lusson, Alain; Rommelue`re, Jean-Franc¸ois; Teukam, Ze´phyrin // Journal of Applied Physics;3/15/2002, Vol. 91 Issue 6, p3922 

    Unintentionally doped ZnO layers grown epitaxially on a sapphire substrate have been exposed either to a hydrogen or deuterium plasma. Secondary ion mass spectroscopy measurements performed subsequently showed a rapid diffusion of hydrogen in these layers. Furthermore, the presence of hydrogen...

  • Comparative study of trap densities of states in CdTe/CdS solar cells. Proskuryakov, Y. Y.; Major, J. D.; Durose, K.; Barrioz, V.; Irvine, S. J. C.; Jones, E. W.; Lamb, D. // Applied Physics Letters;10/8/2007, Vol. 91 Issue 15, p153505 

    Density of deep and shallow states has been investigated in three different kinds of CdTe/CdS samples, two of which were grown by metal-organic chemical vapor deposition (MOCVD) and one by close-space sublimation (CSS) methods. The MOCVD samples were p doped by As and grown either with or...

  • Substrate temperature dependence of properties of ZnO thin films deposited by LP-MOCVD. Ye, J.D.; Gu, S.L.; Zhu, S.M.; Qin, F.; Hu, L.Q.; Ren, L.; Zhang, R.; Shi, Y.; Zheng, Y.D. // Applied Physics A: Materials Science & Processing;2004, Vol. 78 Issue 5, p761 

    ZnO films were prepared on (0002) sapphire by metal-organic chemical vapor deposition (MOCVD) with fixed Zn and O gas flow rates. The film properties displayed complex dependencies on temperature over the range 330–460 °C. All films were preferentially oriented along the (0002)...

  • Transparent zinc oxide films prepared by electrochemical reaction. Izaki, Masanobu; Omi, Takashi // Applied Physics Letters;4/22/1996, Vol. 68 Issue 17, p2439 

    Demonstrates the deposition of transparent zinc oxide (ZnO) films on conductive glasses from a simple aqueous zinc nitrate electrolyte. Possession of a wurtzite structure by the prepared ZnO films; Exhibition of an optical band gap energy; Length of time of the deposition by electrolysis.

  • A study of the growth mechanism of CVD-grown ZnO nanowires. Hong Wan; Ruda, Harry E. // Journal of Materials Science: Materials in Electronics;Oct2010, Vol. 21 Issue 10, p1014 

    ZnO nanowires were grown by CVD process using both pure Zn powder and a mixture of ZnO and graphite powders as the Zn source, and the key factors controlling nanowire growth were identified. In both processes, the partial pressure of zinc vapor determines the prevailing growth morphology and is...

  • Investigations of highly conducting and transparent Sc doped ZnO films grown by the sol-gel process. SHARMA, R.; SHISHODIA, P. K.; WAKAHARA, A.; MEHRA, R. M. // Materials Science (0137-1339);2009, Vol. 27 Issue 1, p225 

    Highly transparent and conductive scandium doped zinc oxide (ZnO/Sc) films were prepared on Coming glass 7059 substrates by the sol-gel technique. The influence of scandium concentration (0-1.5 wt. %) and annealing temperature (300-500 °C)on the structural, optical and electrical properties...

  • Fast and Reversible Wettability Transitions on ZnO Nanostructures. Zhang, Z.; Chen, H.; Zhong, J.; Saraf, G.; Lu, Y. // Journal of Electronic Materials;Aug2007, Vol. 36 Issue 8, p895 

    Surface wettability is an important property of solid/liquid interfaces. Recently, the control of contact angle (CA) has been used to drive liquid droplets in micro-or nanosize channels on biochemical and environmental sensing chips, where a faster CA transition rate is desirable for the prompt...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics