TITLE

Luminescence of heteroepitaxial zinc oxide

AUTHOR(S)
Bethke, S.; Pan, H.; Wessels, B. W.
PUB. DATE
January 1988
SOURCE
Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p138
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin layers of ZnO were grown on (0001) oriented sapphire by organometallic chemical vapor deposition. Low-temperature photoluminescence indicates that near-band-edge luminescence dominates the spectrum. In contrast to bulk grown material deep level luminescence for the layers is relatively weak.
ACCESSION #
9825560

 

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