Photochemical hole burning of tetraphenylporphine derivatives

Kishii, N.; Asai, N.; Kawasumi, K.; Tamura, S.; Seto, J.
January 1988
Applied Physics Letters;1/4/88, Vol. 52 Issue 1, p16
Academic Journal
The substituent effect on photochemical hole burning (PHB) for tetraphenylporphine was studied and the PHB efficiency was related to the electron donating and/or withdrawing properties of the substituents of the phenyl ring. The Hammett-sigma constants of the substituents were related to the efficiency of the photochemical hole burning reaction. Compounds with a low Hammett-sigma constant such as tetra-(4-methoxyphenyl)porphine had a higher PHB reaction efficiency than derivatives with a higher value such as tetraphenylporphine. We have also demonstrated multiple photochemical hole burning using this high efficiency compound tetra-(4-methoxyphenyl)porphine as a guest material.


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