TITLE

Self-electro-optic effect device and modulation convertor with InGaAs/InP multiple quantum wells

AUTHOR(S)
Bar-Joseph, I.; Sucha, G.; Miller, D. A. B.; Chemla, D. S.; Miller, B. I.; Koren, U.
PUB. DATE
January 1988
SOURCE
Applied Physics Letters;1/4/88, Vol. 52 Issue 1, p51
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the first observation of the self-electro-optic effect in InGaAs/InP multiple quantum wells, grown by organometallic vapor phase epitaxy. Clear bistability and switching are observed over a range of 40 nm around 1.61 μm with 20–30 V bias. We demonstrate the operation of a modulation convertor, which converts a modulation from a carrier at 1.6 μm onto a carrier at 0.85 μm and vice versa.
ACCESSION #
9825525

 

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