Metalorganic vapor phase epitaxy of low-resistivity p-type ZnSe

Yasuda, T.; Mitsuishi, I.; Kukimoto, H.
January 1988
Applied Physics Letters;1/4/88, Vol. 52 Issue 1, p57
Academic Journal
Low-resistivity p-type ZnSe layers have been successfully grown on GaAs substrates by metalorganic vapor phase epitaxy with the use of dimethylzinc and diethylselenide as source materials and lithium nitride as the dopant. The lowest resistivity achieved is 0.2 Ω cm, and the highest carrier concentration is 9×1017 cm-3. ZnSe p-n diodes fabricated by this technique have shown blue emission; the spectral peak is located at 467 nm.


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