TITLE

Influence of oxygen implantation on the carrier concentration profile in p-GaAs

AUTHOR(S)
Humer-Hager, T.; Zwicknagl, P.
PUB. DATE
January 1988
SOURCE
Applied Physics Letters;1/4/88, Vol. 52 Issue 1, p63
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of oxygen implantation in p-type GaAs is discussed. Be and O ions are co-implanted into semi-insulating GaAs. Rapid thermal annealing with peak temperatures up to 900 °C is employed to activate the free carriers. The Be/O implanted layers exhibit a distinct narrowing of the carrier profile as compared to the pure Be implantation. This is ascribed to the formation of deep donor complexes associated with oxygen which can compensate the shallow Be acceptors.
ACCESSION #
9825516

 

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