TITLE

Combined Rayleigh and Raman scattering study of AlxGa1-xAs grown via molecular beam epitaxy under reflection high-energy electron diffraction determined growth conditions

AUTHOR(S)
Tang, W. C.; Lao, P. D.; Madhukar, A.; Cho, N. M.
PUB. DATE
January 1988
SOURCE
Applied Physics Letters;1/4/88, Vol. 52 Issue 1, p42
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Rayleigh and Raman scattering studies reveal a direct correlation between the degree of disorder and growth kinetics attendant to the chosen growth conditions in molecular beam epitaxial growth. This inference is derived from studies on AlxGa1-xAs alloys grown under growth conditions indicated by reflection high-energy electron diffraction intensity dynamics to be near optimal and away from optimal.
ACCESSION #
9825494

 

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