Characterization of beam-recrystallized Si films and their Si/SiO2 interfaces in silicon-on-insulator structures: The very thin Si film case

Vu, D. P.; Pfister, J. C.
January 1988
Applied Physics Letters;1/4/88, Vol. 52 Issue 1, p45
Academic Journal
A depletion-mode field-effect transistor is used to determine the electrical characteristics of a silicon-on-insulator (SOI) structure such as the Si film doping, the fixed oxide charges, and the interface trapped charges at the Si/SiO2 interfaces. We consider the case of a very thin Si film, i.e., the Si film thickness is smaller than the maximum depletion layer width. The electrical parameters of the SOI structure are derived from drain-source current versus gate voltage and transconductance characteristics, provided that the back Si surface is accumulated by a proper substrate biasing. The device can be of small dimensions and can be used in process control without any extra process step.


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