New type of solid phase epitaxy of alloy semiconductors by electron beam irradiation

Wada, Takao; Maeda, Yoshinobu
January 1988
Applied Physics Letters;1/4/88, Vol. 52 Issue 1, p60
Academic Journal
Solid phase epitaxial layers of AlxGa1-xSb (x[bar_over_tilde:_approx._equal_to]0.26–0.28) were grown by using an electron beam doping method on a (100)GaSb substrate at 50 °C. Surfaces of Al layers deposited by vacuum evaporation on GaSb wafers were irradiated with a fluence of 0.1–5.6×1018 electrons cm-2 at 7 MeV. After the irradiation and removal of the Al layer, the epilayers with a thickness of ∼400 Å before annealing were measured by a secondary-ion mass spectrometer, an x-ray photoelectron spectroscope, an x-ray diffractometer, and a reflection high-energy electron diffractometer.


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