TITLE

Activation energy for thermal donor formation in silicon

AUTHOR(S)
Claybourn, M.; Newman, R. C.
PUB. DATE
December 1987
SOURCE
Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2197
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Czochralski silicon samples have been heated for increasing periods of time at temperatures of 395, 415, 450, 475, and 490 °C. At each stage infrared spectra of the electronic absorption of thermal donors TD2–TD9 were obtained with the samples at 4.2 K. The data for all the thermal donor centers can be presented on one universal plot, provided the concentration and time axes are simply scaled by factors that depend only on the temperature of heating. It is implied that the rate of formation of each center is limited by the same mechanism. An activation energy of 1.7±0.1 eV is determined for these processes.
ACCESSION #
9825470

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics