Interaction between radiation-induced defects and the Pt-related center in silicon

Weng, Y. M.; Ohta, E.; Sakata, M.
December 1987
Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2206
Academic Journal
The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220–140 °C for the A and E centers, respectively. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center.


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