TITLE

Gas source silicon molecular beam epitaxy using silane

AUTHOR(S)
Hirayama, Hiroyuki; Tatsumi, Toru; Ogura, Atsushi; Aizaki, Naoaki
PUB. DATE
December 1987
SOURCE
Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2213
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The apparatus and its preliminary results of gas source silicon molecular beam epitaxy are reported for the first time. In this study, silane (SiH4) was used as a source gas. A subchamber was designed to control the gas flow precisely. SiH4 exposure during the initial cleaning was effective in lowering the cleaning temperature and saving the cleaning time. Epitaxial silicon films grew uniformly on 4-in. wafers. There was no spitting defect on the epitaxial films. Moreover, selective epitaxial growth was realized using a patterned SiO2 mask.
ACCESSION #
9825458

 

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