Extreme selectivity in the lift-off of epitaxial GaAs films

Yablonovitch, Eli; Gmitter, T.; Harbison, J. P.; Bhat, R.
December 1987
Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2222
Academic Journal
We have discovered conditions for the selective lift-off of large area epitaxial AlxGa1-xAs films from the substrate wafers on which they were grown. A 500-Ã…-thick AlAs release layer is selectivity etched away, leaving behind a high-quality epilayer and a reusable GaAs substrate. We have measured a selectivity of >=107 between the release layer and Al0.4Ga0.6As. This process relies upon the creation of a favorable geometry for the outdiffusion of dissolved H2 gas from the etching zone.


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