TITLE

Extreme selectivity in the lift-off of epitaxial GaAs films

AUTHOR(S)
Yablonovitch, Eli; Gmitter, T.; Harbison, J. P.; Bhat, R.
PUB. DATE
December 1987
SOURCE
Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2222
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have discovered conditions for the selective lift-off of large area epitaxial AlxGa1-xAs films from the substrate wafers on which they were grown. A 500-Ã…-thick AlAs release layer is selectivity etched away, leaving behind a high-quality epilayer and a reusable GaAs substrate. We have measured a selectivity of >=107 between the release layer and Al0.4Ga0.6As. This process relies upon the creation of a favorable geometry for the outdiffusion of dissolved H2 gas from the etching zone.
ACCESSION #
9825450

 

Related Articles

  • High rate epitaxial lift-off of InGaP films from GaAs substrates. Schermer, J. J.; Schermer, J.J.; Bauhuis, G. J.; Bauhuis, G.J.; Mulder, P.; Meulemeesters, W. J.; Meulemeesters, W.J.; Haverkamp, E.; Voncken, M. M. A. J.; Voncken, M.M.A.J.; Larsen, P. K.; Larsen, P.K. // Applied Physics Letters;4/10/2000, Vol. 76 Issue 15 

    Centimeter sized, crack-free single crystal InGaP films of 1 μm thickness were released from GaAs substrates by a weight-induced epitaxial lift-off process. At room temperature, the lateral etch rate of the process as a function of the applied Al[sub 0.85]Ga[sub 0.15]As release layer...

  • Maskless laser interferometric monitoring of InP/InGaAsP heterostructure reactive ion etching. Hayes, Todd R.; Heimann, P. A.; Donnelly, V. M.; Strege, K. E. // Applied Physics Letters;12/24/1990, Vol. 57 Issue 26, p2817 

    Infrared laser interferometry is used to measure etch rate, measure wafer temperature, and identify heterostructure layers in situ during reactive ion etching, with or without masked regions. Interference between reflections from the etching wafer surface, buried heterointerfaces, and polished...

  • Optical transmittance of thin GaAs wafers upon laser pumping in the region of exciton resonances and the continuum of states: Exciton-exciton interaction. Zaitsev, D.; Seisyan, R. // Semiconductors;May2014, Vol. 48 Issue 5, p584 

    The transmittance spectra of thin 'pure' GaAs bulk wafers upon optical pumping corresponding to the band of the ground state of the exciton series are recorded at a temperature of T = 1.7 K. The wafers were grown by molecular-beam epitaxy and vapor-phase epitaxy. An increase in the line...

  • Improvement in low energy ion-induced damage with a low temperature GaAs capping layer. Chen, Ching-Hui; Hu, Evelyn L.; Mishra, Umesh K.; Ibbetson, James P.; Wu, Xuehua; Speck, Jim S. // Applied Physics Letters;9/16/1996, Vol. 69 Issue 12, p1728 

    A thin capping layer of annealed GaAs (∼210 A˚) grown at low temperature (LT-GaAs) can effectively block incident ions from penetrating into the growth substrate. Ion-bombarded, multiple quantum well structures capped by an annealed LT-GaAs layer show a dramatic improvement in the...

  • In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic. Li, N.Y.; Hsin, Y.M. // Applied Physics Letters;5/12/1997, Vol. 70 Issue 19, p2589 

    Examines the chemical beam etching (CBET) process of aluminum gallium arsenide (AlGaAs) using tris-dimethylaminoarsenic (TDMAA) within a chemical beam epitaxy chamber. Establishment of the CBET condition of AlGaAs; Factors affecting the TDMAA etch rate and surface roughness; Improvement of the...

  • Relaxation of an epitaxial InGaAs film on a thin twist-bonded (100) GaAs substrate. Senz, St.; Ka¨stner, G.; Go¨sele, U.; Gottschalch, V. // Applied Physics Letters;2/7/2000, Vol. 76 Issue 6 

    A 30 nm (100) GaAs layer was transferred by twist wafer bonding to a (100) GaAs handling wafer. A similar structure was proposed in the literature as a "compliant substrate." Transmission electron microscopy and x-ray diffraction of 40 and 300 nm epitaxial InGaAs films (0.5% misfit) showed no...

  • Structural and resistance switching properties of ZnO/SrTiO3/GaAs heterostructure grown by laser molecular beam epitaxy. Huang, W.; Dai, J. Y.; Hao, J. H. // Applied Physics Letters;10/18/2010, Vol. 97 Issue 16, p162905 

    ZnO thin films were epitaxially grown on (001) GaAs substrate by laser molecular beam epitaxy with SrTiO3 (STO) as a buffer layer. The interface properties of ZnO/GaAs heterostructure are greatly improved by inserting STO buffer layer. The interfacial effects on the transport and dielectric...

  • Formation of single-phase PtAs2 films on GaAs by selective oxidation and etching. Weiss, Eliezer; Keller, Robert C.; Kniffin, Margaret L.; Helms, C. R. // Applied Physics Letters;6/18/1990, Vol. 56 Issue 25, p2557 

    The oxidation of prereacted Pt films on (100) oriented n-GaAs substrates was studied in the temperature range between 550 and 750 °C using Auger electron spectroscopy and Xe+ ion profiling. The GaPt/PtAs2/GaAs structure formed during annealing in hydrogen was oxidized using a mixture of water...

  • Epitaxial growth of GaAs by solid-phase transport. Chen, J.S.; Kolawa, E.; Garland, C.M.; Nicolet, M.-A. // Applied Physics Letters;9/23/1991, Vol. 59 Issue 13, p1597 

    Examines the epitaxial growth of gallium arsenide films by solid-phase transport. Annealing of substrates with silver film at 550 degree Celsius; Cap layer used to minimize arsenic loss; Use of cross-sectional transmission electron microscopy.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics