TITLE

Interface states in Bi/Bi1-xSbx heterojunctions

AUTHOR(S)
Agassi, D.; Chu, T. K.
PUB. DATE
December 1987
SOURCE
Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2227
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A novel, band-inverted semiconductor junction is proposed. The heterojunction consists of two column V semimetals that have undergone a semimetal-semiconductor transition, i.e., a thin Bi film of thickness ∼100 Å and a Bi1-xSbx alloy with 0.06
ACCESSION #
9825446

 

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