Interface states in Bi/Bi1-xSbx heterojunctions

Agassi, D.; Chu, T. K.
December 1987
Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2227
Academic Journal
A novel, band-inverted semiconductor junction is proposed. The heterojunction consists of two column V semimetals that have undergone a semimetal-semiconductor transition, i.e., a thin Bi film of thickness ∼100 Å and a Bi1-xSbx alloy with 0.06


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