Negative photoconductivity in high electron mobility transistors

Chang, C. S.; Fetterman, H. R.; Ni, D.; Sovero, E.; Mathur, B.; Ho, W. J.
December 1987
Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2233
Academic Journal
High electron mobility transistors are sensitive to light since illumination ionizes deep donor centers and increases the drain current. In this letter the first observation of negative photoconductivity, i.e., drain current decreasing with light, will be reported. The current-voltage characteristics were enhanced by shining white light onto the devices showing negative photoconductivity.


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