Stress variations due to microcracks in GaAs grown on Si

Yacobi, B. G.; Zemon, S.; Norris, P.; Jagannath, C.; Sheldon, P.
December 1987
Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2236
Academic Journal
Luminescence studies of thick (≥5 μm) GaAs epitaxial layers grown on Si substrates reveal regions of nonuniform stress associated with the presence of microcracks. Using cathodoluminescence spectroscopy as a tool for microcharacterization, the magnitude of the stress, derived from the peak positions of the luminescence spectra, is shown to increase gradually as a function of distance from the intersection of two microcracks. The greatest degree of stress relief was found at this intersection.


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