Photoelectromagnetic effect in p-type HgCdTe layers grown by liquid phase epitaxy

Mordowicz, D.; Zemel, A.; Zussman, A.; Eger, D.; Goldstein, Y.
December 1987
Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2239
Academic Journal
Photo-electro-magnetic effect measurements of p-type Hg1-xCdxTe layers are made at 80 K as a function of the magnetic field. A negative (anomalous) effect is observed. The basic properties of the minority carriers, mobility, lifetime, surface and interface recombination rates, are determined from best fitting of the experimental data to the theory.


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