Formation of buried layers of β-SiC using ion beam synthesis and incoherent lamp annealing

Reeson, K. J.; Hemment, P. L. F.; Stoemenos, J.; Davis, J.; Celler, G. E.
December 1987
Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2242
Academic Journal
It is demonstrated that well-defined buried layers of β-SiC can be grown epitaxially within a silicon substrate. This structure is formed by implanting high doses of carbon ions (>3×1017 C+ cm-2) at 200 keV into a (100) single-crystal silicon which is maintained at a temperature of approximately 550 °C. During the subsequent anneal at 1405 °C for 90 min redistribution of the implanted species occurs, enabling the formation of a buried layer of β-SiC overlain by high-quality single-crystal silicon (χmin=4.1%).


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