Influence of an intentional substrate misorientation on deep electron traps in AlGaAs grown by molecular beam epitaxy

Radulescu, D. C.; Schaff, W. J.; Wicks, G. W.; Calawa, A. R.; Eastman, L. F.
December 1987
Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2248
Academic Journal
Deep level transient capacitance spectroscopy has been used to investigate deep level electron traps in thick silicon-doped AlGaAs grown by molecular beam epitaxy (MBE) on GaAs substrates intentionally misoriented (tilted) a few degrees from a nominally (001) surface. Of the three dominant traps observed in AlGaAs, the concentrations of two of these are observed to be a direct function of the substrate tilt angle and tilt direction. The concentration of the third dominant trap, which is related to the DX center, is independent of substrate misorientation during MBE. These observations will help in identifying which impurities and/or defects are affected by substrate misorientation during MBE growth in addition to identifying the origin of deep levels in AlGaAs.


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