Monolayer epitaxy of III-V compounds by low-pressure metalorganic chemical vapor deposition

Razeghi, M.; Maurel, Ph.; Omnes, F.; Nagle, J.
December 1987
Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2216
Academic Journal
We report, in this letter, the successful growth of Ga0.5In0.5As/InP heterostructures by alternating the growth of n(GaAs) and n(InAs) atomic layers. Such structures are designed as (GaAs)n(InAs)n. The influence of parameters such as n or the introduction of a purging time between the InAs-GaAs monolayers has been investigated. Low-temperature photoluminescence experiments showed that (GaAs)n(InAs)n/InP multiquantum wells had a better uniformity in composition and thickness than the conventional Ga0.5In0.5As/InP system.


Related Articles

  • Epitaxial Hg1-xCdxTe growth by low-temperature metalorganic chemical vapor deposition. Lu, P.-Y.; Wang, C.-H.; Williams, L. M.; Chu, S. N. G.; Stiles, C. M. // Applied Physics Letters;11/17/1986, Vol. 49 Issue 20, p1372 

    We report the first low-temperature metalorganic chemical vapor deposition of Hg1-xCdxTe using a thermal precracking technique. The precracking technique enables one to grow epitaxial Hg1-xCdxTe on CdTe substrates at temperatures as low as 225 °C. The growth rate is 1–2 μm/h. The...

  • Growth of III–N materials and devices by metalorganic chemical vapor deposition. Dupuis, R. D.; Grudowski, P. A.; Eiting, C. J.; Park, J. // Semiconductors;Sep99, Vol. 33 Issue 9, p965 

    The characteristics of III-V nitride semiconductor epitaxial layers grown by metalorganic chemical vapor deposition are of interest for the realization of many technologically important devices. This paper will review heteroepitaxial growth on (0001) sapphire substrates as well as the...

  • Electrical properties of semiconductive Nb-doped BaTiO[sub 3] thin films prepared by metal–organic chemical-vapor deposition. Nagano, Daisuke; Funakubo, Hiroshi; Shinozaki, Kazuo; Mizutani, Nobuyasu // Applied Physics Letters;4/20/1998, Vol. 72 Issue 16 

    Epitaxially grown semiconductive Nb-doped BaTiO[sub 3] thin films with low electrical resistivity similar to that of the bulk single crystal were prepared by metal–organic chemical-vapor deposition. Thin films with 1.5–7.5 at. % Nb content showed n-type semiconductor character. The...

  • Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP1-xSbx. Jou, M. J.; Cherng, Y. T.; Jen, H. R.; Stringfellow, G. B. // Applied Physics Letters;2/15/1988, Vol. 52 Issue 7, p549 

    The III/V semiconductor alloy GaP1-xSbx has been grown for the first time. This alloy, which has a large miscibility gap at the growth temperatures of 530–600 °C, has been grown by organometallic vapor phase epitaxy at atmospheric pressure. In spite of the miscibility gap, which is...

  • Effect of substrate misorientation on surface morphology of homoepitaxial CdTe films grown by... Snyder, D.W.; Mahajan, S.; Ko, E.I.; Sides, P.J. // Applied Physics Letters;2/25/1991, Vol. 58 Issue 8, p848 

    Investigates the effect of substrate misorientation on surface morphology of CdTe homoepitaxial films deposited by organometallic vapor phase epitaxy (OMVPE). Effect of misorientation of CdTe(100) substrates on formation of hillocks in CdTe films deposited by OMVPE; Double-crystal x-ray rocking...

  • Effects of substrate misorientation and growth rate on ordering in GaInP. Su, L. C.; Ho, I. H.; Stringfellow, G. B. // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p5135 

    Investigates the effects of both growth rate and the angle of substrate misorientation on ordering, particularly the domain size, shape and the degree of order. Information on the atomic-scale ordering; Description of an experiment in which the GaInP epitaxial layers were grown by...

  • GaInAs/InP selective area metalorganic vapor phase epitaxy for one-step-grown buried low-dimensional structures. Galeuchet, Y. D.; Roentgen, P.; Graf, V. // Journal of Applied Physics;7/15/1990, Vol. 68 Issue 2, p560 

    Presents information on a study which investigated the selective area epitaxy of GaInAs/InP layers grown by low-pressure metalorganic vapor phase epitaxy through SiO[sub2] patterned masks. Experimental details and sample preparation; Qualitative results on growth morphology through different...

  • Optical properties of Ga1-xInxP1-ySby alloys grown by organometallic vapor phase epitaxy. Jaw, D. H.; Jou, M. J.; Fang, Z. M.; Stringfellow, G. B. // Journal of Applied Physics;10/1/1990, Vol. 68 Issue 7, p3538 

    Reports on the properties of GaInPSb epilayers grown by organometallic vapor phase epitaxy (OMVPE). Details of the experiment; Compositions and substrates for the samples.

  • Triisopropylantimony for organometallic vapor phase epitaxial growth of GaSb and InSb. Chen, C.H.; Fang, Z.M.; Stringfellow, G.B.; Gedridge Jr., R.W. // Applied Physics Letters;6/3/1991, Vol. 58 Issue 22, p2532 

    Studies the triisopropylantimony for organometallic vapor phase epitaxial growth of GaSb and InSb. Growth of GaSb and InSb with good surface morphologies; Implications of the high growth efficiencies; Low-temperature photoluminescence measurements.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics