Monolayer epitaxy of III-V compounds by low-pressure metalorganic chemical vapor deposition

Razeghi, M.; Maurel, Ph.; Omnes, F.; Nagle, J.
December 1987
Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2216
Academic Journal
We report, in this letter, the successful growth of Ga0.5In0.5As/InP heterostructures by alternating the growth of n(GaAs) and n(InAs) atomic layers. Such structures are designed as (GaAs)n(InAs)n. The influence of parameters such as n or the introduction of a purging time between the InAs-GaAs monolayers has been investigated. Low-temperature photoluminescence experiments showed that (GaAs)n(InAs)n/InP multiquantum wells had a better uniformity in composition and thickness than the conventional Ga0.5In0.5As/InP system.


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