Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions

Chow, D. H.; McCaldin, J. O.; Bonnefoi, A. R.; McGill, T. C.; Sou, I. K.; Faurie, J. P.
December 1987
Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2230
Academic Journal
Current-voltage behavior is studied experimentally in a Hg0.78Cd0.22Te-CdTe-Hg0.78Cd0.22Te heterostructure grown by molecular beam epitaxy. At temperatures above 160 K, energy-band diagrams suggest that the dominant low-bias current is thermionic hole emission across the CdTe barrier layer. This interpretation yields a direct determination of 390±75 meV for the HgTe-CdTe valence-band discontinuity at 300 K. Similar analyses of current-voltage data taken at 190–300 K suggest that the valence-band offset decreases at low temperatures in this heterojunction.


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