Evidence of the role of defects near the injecting interface in determining SiO2 breakdown

Olivo, P.; Ricco, B.; Nguyen, Thao N.; Kuan, T. S.; Jeng, S. J.
December 1987
Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2245
Academic Journal
Experimental results on oxide breakdown in thin insulator metal-oxide-semiconductor structures are presented to show that at a microscopic level breakdown is related to defects located near the injecting interface. In addition, breakdown is found to be almost independent of electron fluence.


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