InGaAsP/InP high-power semi-insulating blocked planar buried-heterostructure lasers grown entirely by atmospheric organometallic vapor phase epitaxy

Miller, B. I.; Koren, U.; Capik, R. J.; Su, Y. K.
December 1987
Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2260
Academic Journal
High-power semi-insulating blocked planar buried-heterostructure (SIPBH) lasers were grown entirely by atmospheric organometallic vapor phase epitaxy (OMVPE) by using a novel dilution scheme for the trimethylgallium and AsH3. Current thresholds as low as 20 mA and differential quantum efficiencies ≥20% per facet at 1.3 and 1.5 μm were obtained with power outputs of about 25 mW/facet. These results are similar to SIPBH lasers where liquid phase epitaxy was used to grow the active layer, but because of the better planarity and uniformity of OMVPE-grown material, it appears possible to grow material that can give a high yield of distributed feedback lasers.


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