TITLE

Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities

AUTHOR(S)
Chen, H. Z.; Ghaffari, A.; Morkoç, H.; Yariv, A.
PUB. DATE
December 1987
SOURCE
Applied Physics Letters;12/21/1987, Vol. 51 Issue 25, p2094
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Single quantum well, graded refractive index separate confinement heterostucture (SQW GRINSCH) lasers with well thicknesses in the range of 65–480 Å have been grown by molecular beam epitaxy (MBE) on (100) and off of (100) by 4° toward (111) A substrates. The threshold current density appears to be independent of the well thickness in the range of 65–165 Å due to the compensating effects of volume of inversion and optical confinement. Under optimum growth conditions, the tilted substrates led to lower threshold current densities, the lowest value being 93 A/cm2 for a 520-μm-long cavity laser with a 125-Å-thick well. To our knowledge, this is by far the best ever reported threshold current density obtained in a semiconductor injection laser. Deviations from optimum growth conditions drastically increased the threshold current density on (100) substrates whereas the degradation for those on the tilted substrates was much less pronounced.
ACCESSION #
9825389

 

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