TITLE

Operation of Schottky-barrier field-effect transistors of 3C-SiC up to 400 °C

AUTHOR(S)
Daimon, H.; Yamanaka, M.; Shinohara, M.; Sakuma, E.; Misawa, S.; Endo, K.; Yoshida, S.
PUB. DATE
December 1987
SOURCE
Applied Physics Letters;12/21/1987, Vol. 51 Issue 25, p2106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Schottky-barrier field-effect transistors have been fabricated from 3C-SiC and transistor operation has been studied at temperatures up to 400 °C. B-doped high-resistivity and undoped n-type 3C-SiC epilayers were successively grown on p-type Si substrates by chemical vapor deposition. Au and Al electrodes were used for Schottky-barrier gate contacts and source and drain contacts for n-type 3C-SiC, respectively. Transconductances of 1.7 and 0.15 mS/mm were obtained at room temperature and 400 °C, respectively.
ACCESSION #
9825381

 

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