TITLE

Electron beam epitaxy of AlxGa1-xP (a new type of solid phase epitaxy produced by a high-energy electron beam)

AUTHOR(S)
Wada, Takao; Maeda, Yoshinobu
PUB. DATE
December 1987
SOURCE
Applied Physics Letters;12/21/1987, Vol. 51 Issue 25, p2130
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Solid phase epitaxial layers of Al0.25Ga0.75P, Al0.5Ga0.5P, and Al0.75Ga0.25P were grown on (111), (100), and (110) GaP substrates, respectively, by using an electron beam epitaxy technique at 50 °C. The surfaces of Al layers deposited by vacuum evaporation on GaP wafers were irradiated with a fluence of (0.1–1.0)×1018 electrons cm-2 at 7 MeV. After the irradiation and removal of the Al layers, evidence of the creation of epilayers that had been formed before annealing was obtained from a secondary-ion mass spectrometer, an x-ray diffractometer, and a reflection high-energy electron diffractometer.
ACCESSION #
9825366

 

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