Epitaxy of orthorhombic gadolinium disilicide on <100> silicon

Geröcs, I.; Molnár, G.; Jároli, E.; Zsoldos, E.; Petö, G.; Gyulai, J.; Bugiel, E.
December 1987
Applied Physics Letters;12/21/1987, Vol. 51 Issue 25, p2144
Academic Journal
Epitaxial orthorhombic GdSi2 was grown by in situ vacuum annealing of a 50-nm Gd layer on <100> silicon. The epitaxy was proved by x-ray diffraction, electron diffraction, and ion channeling measurements. The lattice mismatch between the orthorhombic GdSi2 and <100> silicon substrate was found to be 4%.


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