TITLE

Epitaxy of orthorhombic gadolinium disilicide on <100> silicon

AUTHOR(S)
Geröcs, I.; Molnár, G.; Jároli, E.; Zsoldos, E.; Petö, G.; Gyulai, J.; Bugiel, E.
PUB. DATE
December 1987
SOURCE
Applied Physics Letters;12/21/1987, Vol. 51 Issue 25, p2144
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Epitaxial orthorhombic GdSi2 was grown by in situ vacuum annealing of a 50-nm Gd layer on <100> silicon. The epitaxy was proved by x-ray diffraction, electron diffraction, and ion channeling measurements. The lattice mismatch between the orthorhombic GdSi2 and <100> silicon substrate was found to be 4%.
ACCESSION #
9825356

 

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