Low-frequency noise in silicon-gate metal-oxide-silicon capacitors before oxide breakdown

Neri, B.; Olivo, P.; Riccò, B.
December 1987
Applied Physics Letters;12/21/1987, Vol. 51 Issue 25, p2167
Academic Journal
Measurements of the fluctuations in the tunneling current It through a thin SiO2 insulating layer, by means of an ultralow noise measurement set, showed that after a first time interval in which its power spectral density is stationary and proportional to I2t, an on-off modulation of It arises, just before oxide breakdown. This bistable noise seems to be related to localized phenomena controlled by trapping-detrapping processes within the oxide. Two possible mechanisms which could give rise to this bistable noise are discussed.


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