Identification of infrared absorption peaks of amorphous silicon-carbon alloy by thermal annealing

Lin, Wei-Liang; Tsai, Hsiung-Kuang; Lee, Si-Chen; Sah, Wen-Jyh; Tzeng, Wen-Jer
December 1987
Applied Physics Letters;12/21/1987, Vol. 51 Issue 25, p2112
Academic Journal
Amorphous silicon-carbon hydrogen alloy was prepared by radio frequency glow discharge decomposition of a silane-methane mixture. The infrared absorption spectra were measured at various stages of thermal annealing. By observing the change of relative intensities between these peaks the hydrogen bonding responsible for the absorption peaks could be assigned more accurately, for example, the stretching mode of monohydride Si–H is determined by its local environment, which supports H. Wagner’s and W. Beyer’s results [Solid State Commun. 48, 585 (1983)] but is inconsistent with the commonly believed view. It is also found that a significant fraction of carbon atoms are introduced into the film in –CH3 configuration which forms a local void and enhances the formation of polysilane chain and dangling bond defects. Only after high-temperature annealing are the hydrogen atoms driven out, and Si and C start to form a better silicon carbide network.


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