Deposition of amorphous SiNxH films on InP in the presence of AsH3

Commère, B.; Habrard, M. C.; Krawczyk, S. K.; Bruyère, J. C.
December 1987
Applied Physics Letters;12/21/1987, Vol. 51 Issue 25, p2142
Academic Journal
Hydrogenated amorphous silicon nitride (a-SiNxH) films have been deposited on InP substrates by the low-temperature (185 °C) plasma enhanced chemical vapor deposition technique in order to realize metal-insulator-semiconductor capacitors. It has been found that the electronic properties of the InP-insulator interface are greatly improved if the insulator deposition is carried out in the presence of AsH3 during the first stage of the process (interface state density in the range of a few 1011 eV-1 cm-2 in the upper part of the gap). The deposited films exhibit very high resistivity (1017 Ω cm) and high breakdown voltage (3×106 V/cm). In similar conditions, no beneficial effect of PH3 during the deposition has been noticed.


Related Articles

  • Amorphous silicon nitride deposited by hot-wire chemical vapor deposition. Fengzhen Liu; Ward, Scott; Gedvilas, Lynn; Keyes, Brian; To, Bob; Qi Wang; Sanchez, Errol; Shulin Wang // Journal of Applied Physics;9/1/2004, Vol. 96 Issue 5, p2973 

    High-quality amorphous silicon nitrides were deposited by hot-wire chemical vapor deposition using SiH4, NH3, and H2 gases. These films show a high deposition rate of 5 Å/s, a low processing temperature of 300 °C, an excellent conformal coverage, a low etching rate of 7 Å/min, an...

  • Hydrogen effusion from hydrogenated amorphous silicon caused by the deposition of a silicon... Matsumoto, T.; Watanabe, J.; Tanaka, T.; Mishima, Y. // Applied Physics Letters;1/7/1991, Vol. 58 Issue 1, p39 

    Studies the effect of silicon nitride (SiN) deposition on hydrogenated amorphous silicon. Determination of the origin of the difference of amorphous silicon/SiN interface properties caused by the order of deposition; Sheet conductance of the on-state in inverted staggered thin film transistors.

  • Structure of interfaces in amorphous silicon/silicon nitride superlattices determined by in situ optical reflectance. Yang, L.; Abeles, B.; Persans, P. D. // Applied Physics Letters;9/15/1986, Vol. 49 Issue 11, p631 

    The formation of amorphous hydrogenated silicon/silicon nitride (a-Si[ATOTHER]@B:[/ATOTHER] H/a-SiNx[ATOTHER]@B:[/ATOTHER] H) interfaces is observed in real time by in situ optical reflectance measurements from growing a-Si[ATOTHER]@B:[/ATOTHER] H/a-SiNx[ATOTHER]@B:[/ATOTHER] H superlattices....

  • Influence of the nitrogen concentration on the electrical characteristic of hydrogenated amorphous silicon nitride (a-SiNx:H) based Schottky diodes. AY, İlker; TOLUNAY, Hüseyin // Turkish Journal of Physics;2010, Vol. 34 Issue 2, p83 

    No abstract available.

  • Atom-by-atom simulations of chemical vapor deposition of nanoporous hydrogenated silicon nitride. Houska, J.; Klemberg-Sapieha, J. E.; Martinu, L. // Journal of Applied Physics;Apr2010, Vol. 107 Issue 8, p083501 

    Amorphous hydrogenated silicon nitride (SiNH) materials prepared by plasma-enhanced chemical vapor deposition (PECVD) are of high interest because of their suitability for diverse applications including optical coatings, gas/vapor permeation barriers, corrosion resistant, and protective coatings...

  • High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride. Wang, Y.Q.; Wang, Y.G.; Cao, L.; Cao, Z.X. // Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3474 

    Confinement of silicon nanoparticles in silicon nitride instead of an oxide matrix might materially facilitate its potential applications as a light-emitting component in optoelectronics. We report in this letter the production of high-density (up to 4.0×10[sup 12]/cm[sup 2] from...

  • Short lifetime photoluminescence of amorphous-SiNx films. Yamaguchi, Kenji; Mizushima, Kazuki; Sassa, Koichi // Applied Physics Letters;12/4/2000, Vol. 77 Issue 23 

    We observed photoluminescence (PL) of amorphous-SiNx films which showed a short radiative lifetime of about 1 ns. The spectrum form is Gaussian centered at around 2.2 eV. The samples were prepared by low-pressure chemical vapor deposition with SiH[sub 2]Cl[sub 2] and NH[sub 3] gases. We propose...

  • Controlled photoluminescence in amorphous-silicon-nitride microcavities. Serpengu¨zel, Ali; Tanriseven, Selim // Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1388 

    Narrow-band and enhanced photoluminescence have been observed in hydrogenated amorphous-silicon-nitride microcavities. The distributed Bragg reflectors were fabricated using alternating layers of hydrogenated amorphous-silicon nitride and hydrogenated amorphous-silicon oxide. The microcavity...

  • Bonding and electronic structures of amorphous SiNx:H. Hasegawa, S.; Tsukao, T.; Zalm, P. C. // Journal of Applied Physics;4/15/1987, Vol. 61 Issue 8, p2916 

    Focuses on a study which investigated the bonding properties and annealing effects for glow-discharge amorphous silicon nitride. Methodology; Mechanisms that can be considered as possible origins for chemical shifts; Result of the incorporation of hydrogen in amorphous silicon nitride.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics