Strain-induced In incorporation coefficient variation in the growth of Al1-xInxAs alloys by molecular beam epitaxy

Turco, F.; Massies, J.
December 1987
Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p1989
Academic Journal
The reported experimental results demonstrate the influence of the substrate-induced strain on the In incorporation coefficient in the growth of AlInAs by molecular beam epitaxy. AlInAs has either been grown lattice matched to InP or with a 2.3% lattice mismatch with GaAs. The In incorporation coefficient has been determined through reflection high-energy electron diffraction intensity oscillations. The strain effect on the In incorporation coefficient is supported by a thermodynamic analysis applied to the more simple but similar case of strained InAs growth.


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