TITLE

Epitaxial growth of Al(111)/Si(111) films using partially ionized beam deposition

AUTHOR(S)
Choi, C.-H.; Harper, R. A.; Yapsir, A. S.; Lu, T.-M.
PUB. DATE
December 1987
SOURCE
Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p1992
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We observed the growth of epitaxial Al(111) films on Si(111) at room temperature by the partially ionized beam deposition technique. The films were deposited in a conventional vacuum condition without in situ cleaning. The beam contained 0.3% of Al self-ions and a bias potential of 1 kV was applied to the substrate during deposition. X-ray diffraction (pole figure) revealed that one of the two possible twin structures, with the Al<110>||Si<110> orientation, was preferentially grown on the Si substrate.
ACCESSION #
9825299

 

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