Epitaxial growth of Al(111)/Si(111) films using partially ionized beam deposition

Choi, C.-H.; Harper, R. A.; Yapsir, A. S.; Lu, T.-M.
December 1987
Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p1992
Academic Journal
We observed the growth of epitaxial Al(111) films on Si(111) at room temperature by the partially ionized beam deposition technique. The films were deposited in a conventional vacuum condition without in situ cleaning. The beam contained 0.3% of Al self-ions and a bias potential of 1 kV was applied to the substrate during deposition. X-ray diffraction (pole figure) revealed that one of the two possible twin structures, with the Al<110>||Si<110> orientation, was preferentially grown on the Si substrate.


Related Articles

  • In situ solid phase epitaxial growth of C49-TiSi[sub 2] on Si(111)-7X7 substrate. Chi Kyu Choi; Soo Jeong Yang; Jai Yon Ryu; Jeong Yong Lee; Hyung-Ho Park; Oh Joon Kwon; Yong Pak Lee; Kun Ho Kim // Applied Physics Letters;7/26/1993, Vol. 63 Issue 4, p485 

    Examines the epitaxial growth of C49-TiSi[sub 2] films on silicon (111) substrate. Effect of in situ annealing on titanium film deposition on silicon(111)-7x7 surface; Characterization of silicide phase through x-ray diffraction and Auger electron spectroscopy; Physical properties of...

  • Low temperature growth of homoepitaxial film on Si substrate cleaned in-situ by ECR hydrogen plasma. Kim, H. W.; Hwang, W. S.; Lee, C.; Reif, R. // Journal of Materials Science Letters;Jul2003, Vol. 22 Issue 13, p939 

    Examines the low temperature growth of homoepitaxial layer on silicon substrate. Use of low temperature in-situ cleaning to reduce the interfacial contaminants; Oxygen concentration at the interface; Measurement of the thickness of the silicon epitaxial layers.

  • Study of InN/GaN interfaces using molecular dynamics. Kioseoglou, J.; Kalessaki, E.; Dimitrakopulos, G.; Komninou, Ph.; Karakostas, Th. // Journal of Materials Science;Jun2008, Vol. 43 Issue 11, p3982 

    Epitaxial growth of thin films is, in general, based on specific interfacial structures defined by a minimum of interfacial energy and usually influenced by the structural mismatch. In the present study, the structures and energies of (0001) InN/GaN epitaxial interfaces are studied using the...

  • Study on the Interface Structure: Diamond Thin Film Epitaxy on (001) Silicon Substrate. Meng, Q. B.; Fei, Y. J.; Kang, J.; Xiong, Y. Y.; Lin, Z. D.; Feng, Ke-an; Wu, Z. J.; Zhang, S. Y. // Modern Physics Letters B;2/10/99, Vol. 13 Issue 3/4, p125 

    An interesting interface structure between diamond film and silicon substrate has been observed. That is, according to the deformation of the diamond film crystal sturcture, a strictly 3:2 matching of the two lattices across the interface is obtained. This result clearly indicates that misfit...

  • Terracing and step bunching in interfaces of molecular beam epitaxy-grown (Al)GaAs multilayers. Albrektsen, O.; Meier, H.P.; Arent, D.J.; Salemink, H.W.M. // Applied Physics Letters;4/26/1993, Vol. 62 Issue 17, p2105 

    Examines the step bunching and terracing in interfaces of molecular beam epitaxy-grown (Al)GaAs multilayers. Use of scanning tunneling microscopy for (Al)GaAs surfaces; Observation on the growth terraces in molecular beam epitaxy-grown Al[sub x]Ga[sub 1-x]As multilayers; Roughness of quantum...

  • Structure, bonding, and band offsets of (100)SrTiO[sub 3]–silicon interfaces. Peacock, P.W.; Robertson, J. // Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5497 

    We derive rules for bonding at interfaces between Si and ionic oxides so that they satisfy valence requirements and give a defect-free interface. These rules are used to analyze epitaxial interfaces of SrTiO[sub 3] on (100)Si. The band offsets are found from the local density of states and it is...

  • Charge conduction mechanisms of atomic-layer-deposited Er2O3 thin films. Jinesh, K. B.; Lamy, Y.; Tois, E.; Besling, W. F. A. // Applied Physics Letters;6/22/2009, Vol. 94 Issue 25, p252906 

    The charge transport mechanism through atomic-layer-deposited erbium oxide thin films has been analyzed with current-voltage (I-V) measurements. At low electric field, i.e., below 3 MV/cm, the charge conduction through 10 nm thick Er2O3 films is dominated by Poole–Frenkel electron...

  • Epitaxial growth of VSi2 on (111) Si. Chien, C. J.; Cheng, H. C.; Nieh, C. W.; Chen, L. J. // Journal of Applied Physics;3/15/1985, Vol. 57 Issue 6, p1887 

    Provides information on the epitaxial growth of vanadium silicide on (111) silicon. Electron gun deposition of vanadium thin films; Interfacial dislocation network at epi-vanadium silicide and silicon interfaces; Difference in thermal expansion coefficients between vanadium silicide and silicon.

  • Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001). Fissel, A.; Da¸browski, J.; Osten, H. J. // Journal of Applied Physics;6/1/2002, Vol. 91 Issue 11, p8986 

    X-ray photoelectron spectroscopy (XPS) was performed to study the formation process of Pr[sub 2]O[sub 3]/Si(001) interfaces and films during epitaxial growth and postgrowth annealing. A significant shift in the Pr and O core-level binding energy was found accompanied by an analogous shift in the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics