TITLE

Gallium arsenide field-effect transistor by close spaced vapor transport epitaxy

AUTHOR(S)
Mimila-Arroyo, J.; Castanedo, R.; Chávez, F.; González, R.; Navarro, G.; Reynoso, A.
PUB. DATE
December 1987
SOURCE
Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p2004
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
For the first time gallium arsenide field-effect transistors have been made using epitaxial layers grown by the close spaced vapor transport technique (CSVT). The layers were unintentionally doped and their free-carrier concentration was adjusted through the growth parameters to around 1017 cm-3. For the growth of the layers, water vapor was used as transporting gas. This transistor confirms the capability of the simplest and most inexpensive epitaxial technique (CSVT) for growing device quality gallium arsenide epitaxial layers.
ACCESSION #
9825291

 

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