Ion beam enhanced magnetron reactive ion etching

Chinn, J. D.
December 1987
Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p2007
Academic Journal
A new dry etching technique is described which allows for decoupling of the chemical etch component from the ionic (physical) component which cannot be achieved in other conventional plasma processing methods. A magnetically confined rf plasma of SF6 was used to contribute a reactive chemical flux with ion bombardment energies of less than 50 eV. In conjunction with this reactive plasma, a broad beam ion source was used to independently deliver an Ar+ ionic flux to the substrate. It was observed that the ion enhanced etch rates of silicon were greater than the individual magnetron reactive ion etch and the argon ion milling rates combined. However, the structure profiles were observed to be directly related to the separately controllable etch components.


Related Articles

  • Ion sources for dry etching: Aspects of reactive ion beam etching for Si technology (invited)a). Scheer, H. -C. // Review of Scientific Instruments;May92, Vol. 63 Issue 5, p3050 

    Aspects of ion beam sources are treated which emerge from their use for reactive ion beam etching (RIBE) in silicon VLSI technology. As a basis for this treatment, the requirements for dry etching for VLSI are elaborated, as well as the consequences of these requirements for ion beam sources to...

  • The influence of substrate topography on ion bombardment in plasma etching. Ingram, S. G. // Journal of Applied Physics;7/15/1990, Vol. 68 Issue 2, p500 

    Presents a study which investigated the influence of substrate topography on ion bombardment in plasma etching. Development of a model of the electric field structure; Calculation of the electric field; Results and discussion; Conclusion.

  • Model for dry etching of silicon. Kojima, Masahiko; Kato, Hisao; Gatto, Mitsuru; Morinaga, Shigeyoki; Ito, Nobuyoshi // Journal of Applied Physics;9/15/1991, Vol. 70 Issue 6, p2901 

    Derives an etch rate equation for the dry etching of silicon in the absence of ion bombardment from a model in which transport atomic fluorine is rate determining. Background on the technical applications for dry etching; Description of the process of dry etching of silicon in the absence of...

  • Simultaneous, multilayer plasma etching and deposition of fluorocarbon layers on silicon. Abraham-Shrauner, Barbara // Journal of Applied Physics;10/15/2003, Vol. 94 Issue 8, p4776 

    The plasma etching and deposition of a fluorocarbon layer on a silicon substrate are modeled by the simultaneous etching and deposition of a stack of fluorocarbon monolayers. Langmuir kinetics apply in each of the monolayers to a depth where the energy of the bombarding ions exceeds or equals...

  • Dry etching of aluminum nitride by an ion beam. Demidov, D. M.; Leus, R. V.; Chalyı, V. P. // Technical Physics Letters;Jun97, Vol. 23 Issue 6, p454 

    A comparative study of the important problem of dry etching AlN by an ion beam has been carried out. The etching rate as a function of the parameters of the process has been determined for layers deposited by vapor-phase epitaxy and by magnetron sputtering. It is shown possible to form a...

  • Reactive–fast-atom beam etching of GaAs using Cl2 gas. Shimokawa, Fusao; Tanaka, Hidenao; Uenishi, Yuji; Sawada, Renshi // Journal of Applied Physics;9/15/1989, Vol. 66 Issue 6, p2613 

    Presents information on a study which investigated the gallium arsenide dry etching using reactive-fast-atom ion beam etching to obtain an etched mirrorlike surface. Characteristics of etching; Experimental details; Results and discussion; Conclusion.

  • Model for the dry etching of heavily doped n-type silicon by atomic fluorine in the absence of ion bombardment. Kojima, Masahiko; Kato, Hisao; Gatto, Mitsuru // Journal of Applied Physics;6/1/1994, Vol. 75 Issue 11, p7507 

    Presents a study which derived etch rate equations for heavily doped n-type silicon in the absence of ion bombardment from a diffusion-controlled model. Calculations of the etch rate as a function of donor impurity concentration; Assumptions used in the derivation of equations; Formula for the...

  • Ion energy distributions in inductively coupled radio-frequency discharges in argon, nitrogen... Wang, Yicheng; Olthoff, J.K. // Journal of Applied Physics;5/1/1999, Vol. 85 Issue 9, p6358 

    Presents information on a study of mass analyzed ion-energy distributions (IEDs) and ion flux densities. Use of the gaseous electronics conference (GEC) radio-frequency (RF) reactor; Role of ion bombardment in the plasma etching of semiconductor materials; Results and discussion; Conclusion.

  • Polymer diffusion as a probe of damage in ion or plasma etching. Tead, S. F.; Vanderlinde, W. E.; Marra, G.; Ruoff, A. L.; Kramer, E. J.; Egitto, F. D. // Journal of Applied Physics;9/15/1990, Vol. 68 Issue 6, p2972 

    Presents a study which examined the effect of dry etching of polystyrene (PS) with oxygen, using ion beams or plasmas, on the diffusion characteristics of molten PS. Applications of polymers as a dielectric material; Sensitivity of polymer diffusion in the melt to changes in molecular topology;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics