Ion beam enhanced magnetron reactive ion etching

Chinn, J. D.
December 1987
Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p2007
Academic Journal
A new dry etching technique is described which allows for decoupling of the chemical etch component from the ionic (physical) component which cannot be achieved in other conventional plasma processing methods. A magnetically confined rf plasma of SF6 was used to contribute a reactive chemical flux with ion bombardment energies of less than 50 eV. In conjunction with this reactive plasma, a broad beam ion source was used to independently deliver an Ar+ ionic flux to the substrate. It was observed that the ion enhanced etch rates of silicon were greater than the individual magnetron reactive ion etch and the argon ion milling rates combined. However, the structure profiles were observed to be directly related to the separately controllable etch components.


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