Plasma-enhanced deposition of high-quality epitaxial silicon at low temperatures

Comfort, James H.; Reif, Rafael
December 1987
Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p2016
Academic Journal
The use of a plasma during the deposition of epitaxial silicon from 750 to 800 °C is explored. Emphasis is placed on enhancement of the deposition process as opposed to the predeposition surface clean. Plasma enhancement of the deposition process is observed without a change in the apparent activation energy, and the mild ion bombardment (plasma) exposure during deposition introduced no additional defects observable by cross-sectional transmission electron microscopy. Plasma enhancement is also shown to facilitate deposition of high-quality epitaxial silicon films with low levels of unintentional impurity incorporation.


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