TITLE

Effects of passivating ionic films on the photoluminescence properties of GaAs

AUTHOR(S)
Skromme, B. J.; Sandroff, C. J.; Yablonovitch, E.; Gmitter, T.
PUB. DATE
December 1987
SOURCE
Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p2022
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The passivating effects of spin-coated films of Na2S·9H2O on GaAs surfaces have been studied using room-temperature photoluminescence (PL) and low-temperature PL spectroscopy. After passivation, the 300 K PL efficiency is increased on both n- and p-type material; improvements of up to 2800× are observed. The surface field and surface recombination-related notch features in the free and bound exciton emission spectra at low temperature are eliminated, implying that the residual band bending under illumination is less than 0.15 V.
ACCESSION #
9825280

 

Related Articles

  • Optical properties of conjugated polymer superlattices prepared by potential-programmed electropolymerization. Fujitsuka, Mamoru; Nakahara, Reiko; Iyoda, Tomokazu; Shimidzu, Takeo; Tsuchiya, Hajime // Journal of Applied Physics;7/15/1993, Vol. 74 Issue 2, p1283 

    Presents information on a study that investigated pholuminescence spectra of thin films of pyrrole and bithiophene copolymer with an alternating layered structure prepared by the potential-programmed electropolymerization method. Methodology of the study; Results and discussion on the study;...

  • Correlation of surface morphology with luminescence of porous Si films by scanning tunneling.... Enachescu, M.; Hartmann, E.; Koch, F. // Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1365 

    Demonstrates the evolution of visible photoluminescence of porous silicon films. Study of surface structure on a nanometer scale; Use of scanning tunneling microscopy; Preparation of samples under several conditions; Correlation between surface morphology and luminescence.

  • Optical characterization of MEH–PPV/Alq3 composite films. Kumar, Amit; Bhatnagar, P. K.; Mathur, P. C.; Tada, K.; Onoda, M. // Journal of Materials Science;Jul2005, Vol. 40 Issue 14, p3849 

    Reports on the optical characterization of positive electrode (e.g. MEH-PPV/Alq3) composite made by studying its absorption and photoluminescence spectra. Growing of the MEH-PPV films over glass substrate using spin cast technique; Conclusion that optical properties of MEH-PPV films is greatly...

  • An approach to enhanced acceptor concentration in ZnO:N films. Li, L.; Shan, C. X.; Li, B. H.; Zhang, J. Y.; Yao, B.; Shen, D. Z.; Fan, X. W.; Lu, Y. M. // Journal of Materials Science;Aug2010, Vol. 45 Issue 15, p4093 

    Owing to the low doping concentration of nitrogen and strong compensation of intrinsic donors, the attainment of highly conductive p-type ZnO films remains one of the largest challenges for the application of ZnO. An approach has been proposed to increase the doping concentration of nitrogen in...

  • Thermochromic Studies of MEH-PPV. Gaur, Bhuvneshwar Prasad; Sharma, A. K.; Jain, Vaibhav; Govindan, Anil // Journal of Pure & Applied Science & Technology;Jan2012, Vol. 2 Issue 1, p32 

    In this work we studied the optical properties of Poly [2-methoxy-5-(2'-ethylhexyloxy)- p-phenylene vinylene] (MEH-PPV) using polymeric blends with polystyrene. The photoluminescence spectrum of (MEH-PPV) present three characteristic peaks correlating to aggregate electronic transition at 608,...

  • Photoluminescence intensity of GaN films with widely varying dislocation density. Sun, Yue Jun; Brandt, Oliver; Ploog, Klaus H. // Journal of Materials Research;May2003, Vol. 18 Issue 5, p1247 

    Investigates the impact of the presence of dislocations on room-temperature photoluminescence intensity in GaN films grown by molecular beam epitaxy (MBE). Background on electron concentration in the samples; Mobilities of the MBE samples; Excitation intensity recorded for continuous wave...

  • Influence of the dielectric phase on the photoluminescence spectrum of fractally structured nanocomposite lead selenide films. Tropina, N. E.; Petrovskaya, Z. N.; Chernoglazova, I. O. // Semiconductors;Nov2009, Vol. 43 Issue 11, p1437 

    The factors affecting the behavior of the spontaneous photoluminescence spectra of fractally structured nanocomposite lead selenide films formed on glass substrates with different thermal expansion coefficients have been considered. It is shown that the location of the luminescence peak depends...

  • Synthesis of crystalline Ge nanoclusters in PE-CVD-deposited SiO2 films. Pedersen, T. P. Leervad; Jensen, J. Skov; Chevallier, J.; Hansen, O.; Jensen, J. M.; Nielsen, B. Bech; Larsen, A. Nylandsted // Applied Physics A: Materials Science & Processing;Dec2005, Vol. 81 Issue 8, p1591 

    The synthesis of evenly distributed Ge nanoclusters in plasma-enhanced chemical-vapour-deposited (PE-CVD) SiO2 thin films containing 8 at. % Ge is reported. This is of importance for the application of nanoclusters in semiconductor technology. The average diameter of the Ge nanoclusters can be...

  • Synthesis of non-stoichiometric (LaO)CuS thin films by pulse laser deposition. Kurumi, Satoshi; Shimizu, Yohei; Kobayashi, Shotaro; Takase, Kouichi; Suzuki, Kaoru // Applied Physics A: Materials Science & Processing;Nov2008, Vol. 93 Issue 3, p741 

    We have attempted to control the photoluminescence spectrum of transparent p-type semiconductor (LaO)CuS to check possibilities of phosphor application using non-stoichiometric thin films prepared by pulse laser deposition method. Two kinds of samples are examined, one is the samples that...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics