TITLE

Deep levels associated with vacancy-impurity complexes in GaAs

AUTHOR(S)
Shen, Yu-Tang; Myles, Charles W.
PUB. DATE
December 1987
SOURCE
Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p2034
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A theory of the deep energy levels produced by triplet vacancy-impurity complexes in GaAs is described. The major chemical trends in the deep levels of a1 and b1 symmetry are predicted for 56 such complexes.
ACCESSION #
9825274

 

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