Deep levels associated with vacancy-impurity complexes in GaAs

Shen, Yu-Tang; Myles, Charles W.
December 1987
Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p2034
Academic Journal
A theory of the deep energy levels produced by triplet vacancy-impurity complexes in GaAs is described. The major chemical trends in the deep levels of a1 and b1 symmetry are predicted for 56 such complexes.


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