Abnormal solid solution and activation behavior in Ga-implanted Si(100)

Matsuo, Jiro; Kato, Ichiro; Horie, Hiroshi; Nakayama, Noriaki; Ishikawa, Hajime
December 1987
Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p2037
Academic Journal
Rapid thermal annealing (RTA) and furnace annealing of Ga-implanted Si were studied. Ga atoms implanted into Si are located on substitutional lattice sites in concentration above the solid solubility limit after short-time and low-temperature annealing. Low-resistivity shallow p+ junctions can be fabricated using this metastable layer. However, precipitation and redistribution of the Ga atoms were observed after high-temperature or longer time annealing. Shallow p+ junctions fabricated by Ga implantation and RTA are suitable for submicron complementary-metal-oxide-semiconductor devices.


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