TITLE

Characteristics of annealed p/n junctions between GaAs and Si (100)

AUTHOR(S)
Unlu, M. S.; Munns, G.; Chen, J.; Won, T.; Unlu, H.; Morkoç, H.; Radhakrishnan, G.; Katz, J.; Verret, D.
PUB. DATE
December 1987
SOURCE
Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p1995
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electrical characteristics of GaAs( p)/Si(n) interface were determined from capacitance-voltage (C-V), current-voltage (I-V), and secondary ion mass spectroscopy (SIMS) measurements and compared to those on GaAs( p) epitaxial layes on GaAs(n) substrates. The comparison was made between the junctions as grown and after an anneal at 850 °C for 20 min in 10% forming gas under an As overpressure. For the GaAs/Si junction the ideality factor changed from 2 or larger to 1.5 and the apparent intercept voltage changed from 2.5 to 1.3 V after annealing. For the GaAs homojunction, the intercept voltage increased from 1.1 to 1.3 V. In addition, the excess current in the forward and reverse bias conditions dropped drastically in the heterojunction. No movement of the metallurgical junction was discernible to within the resolution capability of SIMS. The junction properties obtained by annealing suggest an atomic restructuring of the Si(100) interface during growth or annealing. These new results raise the possibility that the GaAs/Si interface can be made into an electrically viable junction and incorporated into active devices.
ACCESSION #
9825243

 

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