Characteristics of annealed p/n junctions between GaAs and Si (100)

Unlu, M. S.; Munns, G.; Chen, J.; Won, T.; Unlu, H.; Morkoç, H.; Radhakrishnan, G.; Katz, J.; Verret, D.
December 1987
Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p1995
Academic Journal
Electrical characteristics of GaAs( p)/Si(n) interface were determined from capacitance-voltage (C-V), current-voltage (I-V), and secondary ion mass spectroscopy (SIMS) measurements and compared to those on GaAs( p) epitaxial layes on GaAs(n) substrates. The comparison was made between the junctions as grown and after an anneal at 850 °C for 20 min in 10% forming gas under an As overpressure. For the GaAs/Si junction the ideality factor changed from 2 or larger to 1.5 and the apparent intercept voltage changed from 2.5 to 1.3 V after annealing. For the GaAs homojunction, the intercept voltage increased from 1.1 to 1.3 V. In addition, the excess current in the forward and reverse bias conditions dropped drastically in the heterojunction. No movement of the metallurgical junction was discernible to within the resolution capability of SIMS. The junction properties obtained by annealing suggest an atomic restructuring of the Si(100) interface during growth or annealing. These new results raise the possibility that the GaAs/Si interface can be made into an electrically viable junction and incorporated into active devices.


Related Articles

  • Electrical characterization of p-GaAs epilayers disordered by doped spin-on-glass. Deenapanray, P. N. K.; Petravic, M.; Jagadish, C.; Krispin, M.; Auret, F. D. // Journal of Applied Physics;2/1/2005, Vol. 97 Issue 3, p033524 

    Impurity-free disordering (IFD) of uniformly doped p-GaAs epitaxial layers was achieved using either undoped or doped (Ga or P) spin-on-glass (SOG) in conjunction with rapid thermal annealing in the temperature range from 800 to 925 °C. Capacitance-voltage measurements showed a pronounced...

  • Current transport in as-growth and annealed intermediate temperature molecular beam epitaxy.... Nabet, B.; Youtz, A. // Applied Physics Letters;9/18/1995, Vol. 67 Issue 12, p1748 

    Examines the effects of annealed intermediate-temperature gallium arsenide on electrical and optical properties. Conduction properties of unannealed materials grown at 400 degrees celsius; Role of defect states in current conduction; Effects of the annealed defect at 250 degrees celsius on the...

  • Conversion acceptor and its contribution to hole scattering in annealed GaAs. Choi, C. T.; Kim, B. H.; Jung, Y. J.; Shin, Y. G.; Lee, B. C.; Lee, K. H.; Lee, H. J. // Journal of Applied Physics;6/15/1989, Vol. 65 Issue 12, p4795 

    Focuses on a study that investigated the conversion acceptor and its contribution to hole scattering in annealed gallium arsenide. Details of the experiment; Analysis; Results and discussion.

  • Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures. Sobolev, M. M.; Kovsh, A. R.; Ustinov, V. M.; Egorov, A. Yu.; Zhukov, A. E.; Musikhin, Yu. G. // Semiconductors;Feb99, Vol. 33 Issue 2, p157 

    The results of a study of a structure with a single array of InAs quantum dots in a GaAs matrix using capacitance-voltage measurements, deep-level transient spectroscopy (DLTS), photoluminescence spectroscopy, and transmission electron microscopy are reported. Clusters of interacting bistable...

  • Permittivity of GaAs epilayers containing arsenic precipitates. Vasudevan, A.; Carin, S.; Melloch, M. R.; Harmon, E. S. // Applied Physics Letters;8/3/1998, Vol. 73 Issue 5 

    The real part of the permittivity of annealed low temperature grown gallium arsenide (LTG GaAs) has been measured via capacitance measurements taken on p-i-n devices. The intrinsic region of the devices contained LTG GaAs annealed at 700, 800, and 900 °C for 30 s. The capacitance trends as a...

  • Activation and distribution of silicon implanted in gallium arsenide as a result of isothermal radiation annealing. Ardyshev, V. M.; Ardyshev, M. V. // Semiconductors;Oct98, Vol. 32 Issue 10, p1029 

    The method of capacitance-voltage characteristics is used to investigate the concentration profiles n(x) of [sup 28]Si, implanted in GaAs [E= 50 and 75 keV, F=(1.88-6.25) × 10[sup 12] cm[sup -2]] after "photonic" and "electronic" annealing with a protective dielectric coating covering the...

  • Thermal annealing effect on low temperature molecular beam epitaxy grown GaAs: Arsenic.... Luo, J.K.; Thomas, H. // Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3614 

    Investigates the post-growth annealing effects on the electrical properties of low temperature (LT)-GaAs grown by molecular beam epitaxy. Reasons for the increase of resistivity of LT-GaAs; Correlation between cluster density, cluster size, and annealing temperature; Formation of arsenic...

  • Electrical property improvements in In-doped dislocation-free GaAs by bulk annealing. Osaka, Jiro; Hyuga, Fumiaki; Watanabe, Kazuo // Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1307 

    The effects of bulk annealing on the electrical properties of an In-doped dislocation-free semiinsulating GaAs are investigated. The crystal is grown by a fully encapsulated Czochralski method using the vertical magnetic field. It was found that the EL2 concentration increases after isochronal...

  • GaAs-Si heterojunction bipolar transistor. Chen, J.; Won, T.; Ünlü, M. S.; Morkoç, H.; Verret, D. // Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p822 

    A GaAs/Si heterojunction bipolar transistor (HBT) structure is proposed having application for high-frequency operation. The structure combines the high-frequency capability of the GaAs/AlGaAs system with the advanced processing technology of Si. The proposed device consists of an...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics