Slow relaxation and electric field quenching of persistent conductivity in GaAs metal-semiconductor field-effect transistors with different buffer layer structures

Liou, Jenn-Chorng; Lau, Kei May
December 1987
Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p2010
Academic Journal
Slow relaxation in photoconductivity and high transverse field effects have been investigated in GaAs metal-semiconductor field-effect transistors with undoped GaAs buffers and AlGaAs/GaAs superlattice buffers. Persistent photoconductivity (PPC) has been observed in both types of devices at 77 K. Complete electric field quenching of the PPC is possible in devices with a GaAs buffer. A high electric field resulted in more profound effects on the channel conductance of the superlattice buffered devices. The barrier established by the superlattice precludes complete elimination of the PPC and thermal quenching is necessary.


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