Simultaneous delivery of neodymium:yttrium aluminum garnet and CO laser beams by a single As-S glass fiber
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Experimental data on the nano- and microsecond pulsed laser radiation (λ = 1.315 µm) confinement in compensated GaAs are reported. There are three regions of confinement, which are controlled by radiation self-defocusing due to single-photon absorption by deep impurity levels,...
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Reports the localized phosphidation of gallium arsenide by the laser-induced dissociation of trimethylphosphine. Inhibition in the use of gallium arsenide in the semiconductor industry; Deposition of tracks by scanning the focused laser beam; Characterization of tracks using scanning electron...
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We report a new electro-optic sampling configuration which allows planar digital GaAs circuits to be probed noninvasively. Our technique employs a novel backside reflecting geometry, in which a laser beam enters the GaAs substrate from the back and reflects from the circuit metallization. By...
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Experimental data on the pulsed laser radiation confinement in compensated GaAs and ZnSe with deep impurity levels are reported for the laser wavelength ∼ = 1.55 µm and a pulse repetition frequency of up to 100 kHz. It is demonstrated that an increase in the pulse repetition rate is...
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We performed a numerical simulation of phase transitions in gallium arsenide that are induced by the combined action of nanosecond laser pulses initiating melting and an additional neodymium-glass laser irradiation enabling the control of the interface velocity. In the case of counterpropagating...
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