Simultaneous delivery of neodymium:yttrium aluminum garnet and CO laser beams by a single As-S glass fiber
Related Articles
- Nano- and Microsecond Laser Pulse Confinement in Compensated Gallium Arsenide. Bagrov, I. V.; Zhevlakov, A. P.; Sidorov, A. I. // Technical Physics Letters;May2001, Vol. 27 Issue 5, p406
Experimental data on the nano- and microsecond pulsed laser radiation (? = 1.315 �m) confinement in compensated GaAs are reported. There are three regions of confinement, which are controlled by radiation self-defocusing due to single-photon absorption by deep impurity levels,...
- Surface phosphidation of GaAs by the laser-induced dissociation of trimethylphosphine. Davidson, Jack L.; John, Philip // Applied Physics Letters;9/12/1994, Vol. 65 Issue 11, p1397
Reports the localized phosphidation of gallium arsenide by the laser-induced dissociation of trimethylphosphine. Inhibition in the use of gallium arsenide in the semiconductor industry; Deposition of tracks by scanning the focused laser beam; Characterization of tracks using scanning electron...
- Electro-optic sampling of planar digital GaAs integrated circuits. Freeman, J. L.; Diamond, S. K.; Fong, H.; Bloom, D. M. // Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1083
We report a new electro-optic sampling configuration which allows planar digital GaAs circuits to be probed noninvasively. Our technique employs a novel backside reflecting geometry, in which a laser beam enters the GaAs substrate from the back and reflects from the circuit metallization. By...
- Direct writing of GaAs monolayers by laser-assisted atomic layer epitaxy. Karam, N. H.; Liu, H.; Yoshida, I.; Bedair, S. M. // Applied Physics Letters;4/4/1988, Vol. 52 Issue 14, p1144
Direct writing of GaAs epitaxial monolayers has been achieved by laser-assisted atomic layer epitaxy (LALE) technique on GaAs substrates. Sequential exposures of the substrate to trimethylgallium (TMG) and arsine (AsH3) were separated by periods of hydrogen purging to prevent mixing. Laser beam...
- Infrared photorefractive passive phase conjugation with BaTiO3: Demonstrations with GaAlAs and 1.09-μm Ar+ lasers. Cronin-Golomb, Mark; Lau, Kam Y.; Yariv, Amnon // Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p567
We report photorefractive passive phase conjugation of GaAlAs laser radiation at 815–865 nm and Ar+ laser radiation at 1090 nm. A ring passive phase conjugate mirror was used with BaTiO3 as the real-time holographic gain medium. With GaAlAs lasers phase conjugate reflectivities of up to...
- Ar ion laser-assisted metalorganic molecular beam epitaxy of GaAs. Sugiura, H.; Iga, R.; Yamada, T.; Yamaguchi, M. // Applied Physics Letters;1/23/1989, Vol. 54 Issue 4, p335
Selective growth of GaAs using an Ar+ laser beam is reported. The laser irradiation during growth in the substrate temperature range 400–525 °C forms a GaAs spot of 400 μm in diameter. The spot growth rate increases up to 1.3 μm/h with laser power and does not depend on the type...
- Special Features of the Periodic-Pulse-Train Laser Radiation Confinement in Doped Gallium Arsenide and Zinc Selenide. Mikheeva, O. P.; Sidorov, A. I.; Khaıkina, A. S.; Chuguevets, E. V. // Technical Physics Letters;Jan2002, Vol. 28 Issue 1, p48
Experimental data on the pulsed laser radiation confinement in compensated GaAs and ZnSe with deep impurity levels are reported for the laser wavelength ∼ = 1.55 µm and a pulse repetition frequency of up to 100 kHz. It is demonstrated that an increase in the pulse repetition rate is...
- Polarization characteristics of AlGaAs/GaAs double-heterostructure lasers grown on Si substrates. Liu, Xiaoming; Lee, Henry P.; Wang, Shyh // Applied Physics Letters;11/5/1990, Vol. 57 Issue 19, p1955
The polarization of laser radiations from AlGaAs/GaAs double-heterostructure lasers grown on planar, trenched, and SiN-patterned Si substrates are examined. It was found that TM modes lase first in most of these lasers. Competition between TE and TM modes also occurs in some devices. A...
- cw laser irradiation of GaAs: Arsenic formation and photoluminescence degradation. Campbell, I. H.; Fauchet, P. M. // Applied Physics Letters;7/2/1990, Vol. 57 Issue 1, p10
Low-power, cw laser irradiation of GaAs leads to the formation of solid arsenic at the sample surface and to the degradation of band-gap photoluminescence (PL) efficiency. In situ Raman scattering and PL are used to measure the lattice and carrier temperature in addition to monitoring the...
