Simultaneous delivery of neodymium:yttrium aluminum garnet and CO laser beams by a single As-S glass fiber
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Experimental data on the nano- and microsecond pulsed laser radiation (? = 1.315 �m) confinement in compensated GaAs are reported. There are three regions of confinement, which are controlled by radiation self-defocusing due to single-photon absorption by deep impurity levels,...
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Reports the localized phosphidation of gallium arsenide by the laser-induced dissociation of trimethylphosphine. Inhibition in the use of gallium arsenide in the semiconductor industry; Deposition of tracks by scanning the focused laser beam; Characterization of tracks using scanning electron...
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We report a new electro-optic sampling configuration which allows planar digital GaAs circuits to be probed noninvasively. Our technique employs a novel backside reflecting geometry, in which a laser beam enters the GaAs substrate from the back and reflects from the circuit metallization. By...
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Direct writing of GaAs epitaxial monolayers has been achieved by laser-assisted atomic layer epitaxy (LALE) technique on GaAs substrates. Sequential exposures of the substrate to trimethylgallium (TMG) and arsine (AsH3) were separated by periods of hydrogen purging to prevent mixing. Laser beam...
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Selective growth of GaAs using an Ar+ laser beam is reported. The laser irradiation during growth in the substrate temperature range 400–525 °C forms a GaAs spot of 400 μm in diameter. The spot growth rate increases up to 1.3 μm/h with laser power and does not depend on the type...
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Experimental data on the pulsed laser radiation confinement in compensated GaAs and ZnSe with deep impurity levels are reported for the laser wavelength ∼ = 1.55 µm and a pulse repetition frequency of up to 100 kHz. It is demonstrated that an increase in the pulse repetition rate is...
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The polarization of laser radiations from AlGaAs/GaAs double-heterostructure lasers grown on planar, trenched, and SiN-patterned Si substrates are examined. It was found that TM modes lase first in most of these lasers. Competition between TE and TM modes also occurs in some devices. A...
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Low-power, cw laser irradiation of GaAs leads to the formation of solid arsenic at the sample surface and to the degradation of band-gap photoluminescence (PL) efficiency. In situ Raman scattering and PL are used to measure the lattice and carrier temperature in addition to monitoring the...