Raman scattering study of low dose Si±-implanted GaAs used for metal-semiconductor field-effect transistor fabrication

Wagner, J.; Frey, Th.; Jantz, W.
December 1987
Applied Physics Letters;12/7/1987, Vol. 51 Issue 23, p1904
Academic Journal
The annealing of the lattice damage introduced by Si+ implantation into GaAs as well as the electrical activation of the dopant has been studied by Raman scattering. Implantation doses (4×1012–1×1013 cm-2) and annealing conditions (800–1040 °C for 5 s) were used which are typical for GaAs metal-semiconductor field-effect transistor fabrication. The normalized peak intensity of the longitudinal optical (LO) phonon-plasmon coupled mode is found to correlate with the sheet of conductivity, i.e., it probes the electrical activation. The lattice perfection, in contrast, is most sensitively measured by resonant 2LO-phonon scattering.


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