TITLE

Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxy

AUTHOR(S)
Kobayashi, N.; Benchimol, J. L.; Alexandre, F.; Gao, Y.
PUB. DATE
December 1987
SOURCE
Applied Physics Letters;12/7/1987, Vol. 51 Issue 23, p1907
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The substrate temperature (Ts) dependence (350–700 °C) of GaAs and Ga1-y InyAs growth rates was investigated in metalorganic molecular beam epitaxy (MOMBE), using triethylgallium (TEG), trimethylindium (TMI), and solid arsenic (As4) sources. For GaAs growth, four distinct Ts dependent regions are observed, including a weak desorption process (500–650 °C) characteristic of MOMBE, preceding atomic Ga desorption (Ts >650 °C). When adding a TMI flux to grow Ga1-yInyAs, this desorption process was much enhanced up to 550 °C, and then decreased above 550 °C when the In desorption phenomenon takes place. Correlatively, the In alloy composition peaks at 550 °C. The same dependence was observed in Ga1-yInyAs growth using solid In and TEG sources. However, in Ga1-xAlxAs growth using solid Al or triethylaluminum (TEA) and TEG sources, the weak desorption observed in GaAs MOMBE was strongly minimized. From these results, possible growth mechanisms are discussed.
ACCESSION #
9825203

 

Related Articles

  • Electrical and structural properties of In[sub x]Ga[sub 1-x]N on GaAs. Abernathy, C.R.; MacKenzie, J.D. // Applied Physics Letters;3/27/1995, Vol. 66 Issue 13, p1632 

    Examines the growth of In[sub x]Ga[sub 1-x]N layers grown on GaAs substrates by metalorganic molecular beam epitaxy. Use of a H[sub 2] rather than a He carrier gas; Variation in the structural and electrical properties in terms of composition; Determination of the composition of samples by...

  • Lateral thickness modulation of InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy. Cotta, M.A.; Hamm, R.A.; Chu, S.N.G.; Harriott, L.R.; Temkin, H. // Journal of Applied Physics;1/1/1994, Vol. 75 Issue 1, p630 

    We have grown InGaAs quantum wells (QW), lattice matched to InP, with spatially modulated thickness along the [011] direction of the crystal. Kinetic roughening alters the morphology of the underlying InP buffer layer and leads to the modulation of the well thickness. Photoluminescence (PL)...

  • Surface accumulation of tin in tin-doped gallium arsenide grown by low pressure metalorganic vapor phase epitaxy. Sundaram, V. S.; Roth, A. P.; Williams, D. F.; Yakimova, R. // Applied Physics Letters;1984, Vol. 45 Issue 11, p1196 

    The surface accumulation of tin in low pressure metalorganic chemical vapor epitaxy (MOVPE) grown tin-doped GaAs layers has been investigated by secondary ion mass spectroscopy. Our results show that the surface enrichment factor for MOVPE grown layers is negligible for n<=5×1018 cm-3. For...

  • TMGa/TEGa interactions in metalorganic molecular beam epitaxy. Kamp, M.; Morsch, G. // Applied Physics Letters;1/16/1995, Vol. 66 Issue 3, p367 

    Observes the metalorganic molecular beam epitaxy of gallium arsenide growth rates interactions between the precursors of TMgallium and TE gallium. Proposal on the elementary adsorption and desorption mechanism; Investigation on the separate and common injection of alkyls; Discussion on the...

  • Growth of high quality indium phosphide from metalorganic sources by molecular beam epitaxy. Andrews, D. A.; Davey, S. T.; Tuppen, C. G.; Wakefield, B.; Davies, G. J. // Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p816 

    We report the growth of nominally undoped InP by molecular beam epitaxy (MBE) from metallic indium, trimethylindium, or triethylindium and phosphine. We find significantly reduced acceptor incorporation when metalorganic sources are used, with exciton-dominated photoluminescence at 4.2 K and...

  • Metalorganic molecular beam epitaxy of γ-Al2O3 films on Si at low growth temperatures. Sawada, Kazuaki; Ishida, Makoto; Nakamura, Tetsuro; Ohtake, Norio // Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1672 

    Heteroepitaxial growth of γ-Al2O3 films was performed successfully onto (100) and (111) Si substrates at low substrate temperatures between 720 and 800 °C by metalorganic molecular beam epitaxy using N2 bubbled Al(CH3)3 and N2O. Using in situ reflection high-energy electron diffraction,...

  • p-type conductivity control of ZnSe highly doped with nitrogen by metalorganic molecular beam epitaxy. Taike, A.; Migita, M.; Yamamoto, H. // Applied Physics Letters;5/14/1990, Vol. 56 Issue 20, p1989 

    p-type ZnSe with resistivity low enough for device application has been realized by metalorganic molecular beam epitaxy. This method has enabled growth of p-type ZnSe doped with nitrogen at concentrations as high as 1019 cm-3 by using ammonia as a dopant source. The dependence of...

  • Passivation of carbon-doped GaAs layers by hydrogen introduced by annealing and growth ambients. Kozuch, D. M.; Stavola, Michael; Pearton, S. J.; Abernathy, C. R.; Hobson, W. S. // Journal of Applied Physics;4/15/1993, Vol. 73 Issue 8, p3716 

    Examines heavily C-doped GaAs epilayers grown by metalorganic molecular beam epitaxy and metalorganic vapor phase epitaxy by infrared absorption, secondary ion mass spectrometry and Hall measurements. Experimental procedures; Properties of C-H complexes in GaAs:C epitaxial layers; Conclusion.

  • Growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy using tris-dimethylaminoarsenic. Abernathy, C.R.; Wisk, P.W. // Applied Physics Letters;5/11/1992, Vol. 60 Issue 19, p2421 

    Investigates the growth of gallium arsenide and aluminum gallium arsenide by metalorganic molecular beam epitaxy using tris-dimethylaminoarsenic (DMAA). Use of high-temperature cracker cells to decompose AsH[sub 3] to elemental As; Determination of specular surface morphologies in varying...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics