New method of characterizing majority and minority carriers in semiconductors

Leslie-Pelecky, D. L.; Seiler, D. G.; Loloee, M. R.; Littler, C. L.
December 1987
Applied Physics Letters;12/7/1987, Vol. 51 Issue 23, p1916
Academic Journal
A novel characterization method using magnetoconductivity tensor components to determine the carrier concentration and mobility of majority and minority carriers is presented. Results are given for bulk n-HgCdTe (one carrier), liquid phase epitaxial n-HgCdTe (two carriers), and p-InSb (two or three carriers). Advantages of this method over the standard Hall coefficient analysis are discussed.


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