TITLE

Phonon shifts and strains in strain-layered (Ga1-xInx)As

AUTHOR(S)
Burns, Gerald; Wie, C. R.; Dacol, F. H.; Pettit, G. D.; Woodall, J. M.
PUB. DATE
December 1987
SOURCE
Applied Physics Letters;12/7/1987, Vol. 51 Issue 23, p1919
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have measured the phonon frequencies (Raman technique) and the strains (x-ray rocking curve technique) of (Ga1-xInx)As films on GaAs (100) substrates. Films with various x values and various thicknesses were studied. The films range from perfect epitaxial to those that have relaxed by different amounts. The strain-induced frequency shift was calculated for each sample using the phonon deformation constants and measured strains. From the measurements and calculation, it is shown that the frequency shifts due to strain and the equivalent bulk frequencies for the phonon give internal agreement. This indicates that the Raman technique can be used for in situ monitoring of the growth process.
ACCESSION #
9825196

 

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