TITLE

Very low temperature (250 °C) epitaxial growth of silicon by glow discharge of silane

AUTHOR(S)
Baert, K.; Symons, J.; Vandervorst, W.; Vanhellemont, J.; Caymax, M.; Poortmans, J.; Nijs, J.; Mertens, R.
PUB. DATE
December 1987
SOURCE
Applied Physics Letters;12/7/1987, Vol. 51 Issue 23, p1922
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Epitaxial growth of phosphorus-doped silicon deposited at 250 °C from a radio-frequency glow discharge from SiH4 is demonstrated by high-resolution electron microscopy (HREM) and spreading resistance profile measurements. Thin epitaxial films are present at the interface between (100) Si substrates and hydrogenated amorphous silicon. After recrystallization at 700 °C, single-crystal layers are obtained, in which HREM reveals extensive twinning. The fact that epitaxial growth can take place at 250 °C in a system with a background pressure of only 5×10-6 mbar can be attributed to the presence of species in the SiH4 plasma that reduce the native oxide and the use of HF in the cleaning procedure.
ACCESSION #
9825191

 

Related Articles

  • Production of high-quality amorphous silicon films by evaporative silane surface decomposition. Doyle, J.; Robertson, R.; Lin, G. H.; He, M. Z.; Gallagher, A. // Journal of Applied Physics;9/15/1988, Vol. 64 Issue 6, p3215 

    Discusses a study that investigated the production of high-quality amorphous silicon films by evaporative silane surface decomposition. Details on the deposition technique; Materials and methods used; Conclusion of the study.

  • Doping of InP and GaInAs during organometallic vapor-phase epitaxy using disilane. Woelk, E.; Beneking, H. // Journal of Applied Physics;4/15/1988, Vol. 63 Issue 8, p2874 

    Presents a study that examined the use of disilane as a silicon doping source in organometallic vapor-phase epitaxy of thin films. Analysis of the temperature dependence of indium phosphide doping; Determination of the electrical characteristics of the thin films; Methodology.

  • Heteroepitaxial Growth and Annealing of γ-Al[sub 2]O[sub 3] Thin Films on Silicon. Tan, Liwen; Wang, Jun; Wang, Qiyuan; Yu, Yuanhuan; Lin, Lanying // International Journal of Modern Physics B: Condensed Matter Phys;11/20/2002, Vol. 16 Issue 28/29, p4302 

    The γ-Al[sub 2]O[sub 3] films were grown on Si (100) substrates using the sources of TMA (Al (CH[sub 3])[sub 3]) and O[sub 2] by very low-pressure chemical vapor deposition (VLP-CVD). It has been found that the γAl[sub 2]O[sub 3] film has a mirror-like surface and the RMS was about 2.5nm....

  • Pulsed laser assisted epitaxy of Ge[sub x]Si[sub 1-x] alloys on Si <100>. Lombardo, S.; Kramer, K.; Thompson, Michael O.; Smith, Duane R. // Applied Physics Letters;12/23/1991, Vol. 59 Issue 26, p3455 

    Investigates the epitaxial quality of Ge[sub x]Si[sub 1-x] films grown on silicon <100> by laser-assisted technique. Performance of in situ cleaning; Sufficiency of the energy density to melt the layer of the underlying single crystal; Reduction of laser energy density.

  • Low-temperature homoepitaxial growth on Si(111) mediated by thin overlayers of Au. Wilk, G.D.; Martinez, R.E. // Applied Physics Letters;8/15/1994, Vol. 65 Issue 7, p866 

    Examines the homoepitaxial growth of silicon (Si) on Si(111) through an overlayer of gold (Au) thin films. Crystalline quality of films with unlimited thickness; Application of Rutherford backscattering spectrometry; Range of Au coverage providing the best quality of epitaxy; Results of films...

  • Electrical and structural characterization of ultrathin epitaxial CoSi2 on Si(111). Phillips, Julia M.; Batstone, J. L.; Hensel, J. C.; Cerullo, M. // Applied Physics Letters;12/7/1987, Vol. 51 Issue 23, p1895 

    We report the fabrication of epitaxial CoSi2 layers on Si(111) as thin as 1 nm. The crystalline lattice of these layers is coherent with the Si lattice, and the silicide is electrically continuous. There are pronounced structural differences between films which are less than 3 nm thick and those...

  • Control of epitaxial orientation of Si on CoSi2(111). Tung, R. T.; Batstone, J. L. // Applied Physics Letters;5/9/1988, Vol. 52 Issue 19, p1611 

    Template techniques for Si epitaxy are designed based on the two structures, CoSi2-C and CoSi2-S, of the CoSi2 surface. The different stacking sequences of the two CoSi2 surfaces have led to the growth of single-crystal epitaxial Si layers with either type A or type B orientation on CoSi2(111)....

  • Electric-field-enhanced photoscission of the Si backbone in organopolysilane films. Shimakawa, K.; Okada, T.; Imagawa, O. // Applied Physics Letters;8/26/1991, Vol. 59 Issue 9, p1078 

    Examines the electric-field-enhanced photoscission of the silicon backbone in organopolysilane films. Effects of the prolonged ultraviolet light irradiation of the materials; Reversibility of the changes by annealing near the melting temperature; Causes of the photoscission of the silicon...

  • Structure and crystal growth of atmospheric and low-pressure chemical-vapor-deposited silicon films. Bisaro, R.; Magariño, J.; Proust, N.; Zellama, K. // Journal of Applied Physics;2/15/1986, Vol. 59 Issue 4, p1167 

    Presents information on a study which examined the structure and crystal growth of undoped and annealed silicon films prepared by chemical vapor deposition and low-pressure chemical vapor deposition of silane. Uses of polycrystalline silicon thin films growth by atmospheric pressure or low...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics