TITLE

Raman scattering measurements of decreased barrier heights in GaAs following surface chemical passivation

AUTHOR(S)
Farrow, L. A.; Sandroff, C. J.; Tamargo, M. C.
PUB. DATE
December 1987
SOURCE
Applied Physics Letters;12/7/1987, Vol. 51 Issue 23, p1931
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present Raman scattering data from GaAs samples whose surfaces had been treated with thin films of sodium sulfide nonahydride (Na2S·9H2O). Raman scattering provides a quantitative, contactless means of measuring the reduced barrier height associated with decreased density of GaAs surface states. For GaAs samples doped at levels of n≊1018 cm-3, the barrier height is reduced to 0.48±0.10 eV.
ACCESSION #
9825187

 

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