Raman scattering measurements of decreased barrier heights in GaAs following surface chemical passivation

Farrow, L. A.; Sandroff, C. J.; Tamargo, M. C.
December 1987
Applied Physics Letters;12/7/1987, Vol. 51 Issue 23, p1931
Academic Journal
We present Raman scattering data from GaAs samples whose surfaces had been treated with thin films of sodium sulfide nonahydride (Na2S·9H2O). Raman scattering provides a quantitative, contactless means of measuring the reduced barrier height associated with decreased density of GaAs surface states. For GaAs samples doped at levels of n≊1018 cm-3, the barrier height is reduced to 0.48±0.10 eV.


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