Interface roughness scattering in GaAs/AlAs quantum wells

Sakaki, H.; Noda, T.; Hirakawa, K.; Tanaka, M.; Matsusue, T.
December 1987
Applied Physics Letters;12/7/1987, Vol. 51 Issue 23, p1934
Academic Journal
We study experimentally and theoretically the influence of interface roughness on the mobility of two-dimensional electrons in modulation-doped AlAs/GaAs quantum wells. It is shown that interface roughness scattering is the dominant scattering mechanism in thin quantum wells with a well thickness Lw<60 Å, where electron mobilities are proportional to L6w, reaching 2×103 cm2/V s at Lw∼55 Å. From detailed comparison between theory and experiment, it is determined that the ‘‘GaAs-on-AlAs’’ interface grown by molecular beam epitaxy has a roughness with the height of 3–5 Å and a lateral size of 50–70 Å.


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